Low-voltage and short-channel pentacene field-effect transistors with top-contact geometry using parylene-C shadow masks

Title:
Low-voltage and short-channel pentacene field-effect transistors with top-contact geometry using parylene-C shadow masks
Creator:
Chung, Yoonyoung (Author)
Murmann, Boris (Author)
Selvarasah, Selvapraba (Author)
Dokmeci, Mehmet R. (Author)
Bao, Zhenan (Author)
Language:
English
Publisher:
American Institute of Physics
Copyright date:
2010
Type of resource:
Text
Genre:
Articles
Format:
electronic
Digital origin:
born digital
Abstract/Description:
We have fabricated high-performance top-contact pentacene field-effect transistors using a nanometer-scale gate dielectric and parylene-C shadow masks. The high-capacitance gate dielectric, deposited by atomic layer deposition of aluminum oxide, resulted in a low operating voltage of 2.5 V. The flexible and conformal parylene-C shadow masks allowed fabrication of transistors with channel lengths of L = 5, 10, and 20 μm. The field-effect mobility of the transistors was μ = 1.14 (±0.08) cm2/V s on average, and the IMAX/IMIN ratio was greater than 106.
Comments:
Originally published in Applied Physics Letters v.96 no.13 (2010), p.133306. doi:10.1063/1.3336009
Subjects and keywords:
Field-effect transistors
Organic electronics
Nanostructured materials
aluminium compounds
atomic layer epitaxial growth
carrier mobility
masks
nanotechnology
organic field effect transistors
Electronic Devices and Semiconductor Manufacturing
Nanoscience and Nanotechnology
Permanent Link:
http://hdl.handle.net/2047/d20000962

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