Parallel arrays of individually addressable single-walled carbon nanotube field-effect transistors

Title:
Parallel arrays of individually addressable single-walled carbon nanotube field-effect transistors
Creator:
Lastella, Sarah (Author)
Mallick, Govind (Author)
Woo, Raymond (Author)
Karna, Shashi P. (Author)
Rider, David A. (Author)
Manners, Ian (Author)
Jung, Yung-Joon (Author)
Ryu, Chang Y. (Author)
Ajayan, Pulickel M. (Author)
Language:
English
Publisher:
American Institute of Physics
Copyright date:
2006
Type of resource:
Text
Genre:
Articles
Format:
electronic
Digital origin:
born digital
Abstract/Description:
High-throughput field-effect transistors (FETs) containing over 300 disentangled, high-purity chemical-vapor-deposition-grown single-walled carbon nanotube (SWNT) channels have been fabricated in a three-step process that creates more than 160 individually addressable devices on a single silicon chip. This scheme gives a 96% device yield with output currents averaging 5.4 mA and reaching up to 17 mA at a 300 mV bias. Entirely semiconducting FETs are easily realized by a high current selective destruction of metallic tubes. The excellent dispersity and nearly-defect-free quality of the SWNT channels make these devices also useful for nanoscale chemical and biological sensor applications.
Comments:
Originally published in Journal of Applied Physics, v.99, 024302 (2006); doi:10.1063/1.2161820
Subjects and keywords:
Field-effect transistors
Nanotubes
Microelectromechanical systems
carbon nanotubes
field effect transistors
nanotube devices
nanotechnology
Electrical and Electronics
Nanoscience and Nanotechnology
Permanent Link:
http://hdl.handle.net/2047/d20000923

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