Structure and magnetism of Ba-Hexaferrite films grown on single crystal 6-H SiC with graduated interfacial MgO buffer layers

Title:
Structure and magnetism of Ba-Hexaferrite films grown on single crystal 6-H SiC with graduated interfacial MgO buffer layers
Creator:
Chen, Zhaohui (Author)
Yang, Aria Fan (Author)
Cai, Zhuhua (Author)
Yoon, Soack Dae (Author)
Ziemer, Katherine S. (Author)
Vittoria, C. (Author)
Harris, Vincent Girard, 1962- (Author)
Language:
English
Publisher:
IEEE
Copyright date:
2006
Type of resource:
Text
Genre:
Articles
Format:
electronic
Digital origin:
born digital
Abstract/Description:
M-type barium hexaferrite films were processed by pulsed laser deposition on single-crystal 6-H silicon carbide substrates. MgO buffer and barrier layers were introduced to improve the film quality. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, X-ray diffraction, vibrating sample magnetometry, and ferromagnetic resonance (FMR). X-ray Θ − 2Θ diffraction measurements indicated a strong (0, 0, 2n) crystallographic alignment. The magnetization of the BaM film is comparable to bulk values (4πMs ~ 4320 G). A derivative power FMR linewidth of 500 Oe was measured at 55 GHz for the as-deposited films. This paper explores a potential next generation of microwave and millimeter-wave monolithic integrated circuit technology based upon a wide band-gap semiconducting material.
Comments:
Originally published in IEEE Transactions on Magnetics, vol.42, no.10, pp.2855-2857, Oct. 2006. doi: 10.1109/TMAG.2006.879883
Subjects and keywords:
Ferrites (Magnetic materials)
Ba-hexaferrite
films
silicon carbide
Chemical Engineering
Electrical and Computer Engineering

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